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Molecular-beam epitaxy growth and nitrogen doping of ZnSe1-xTex alloys grown on InP substrates

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6 Author(s)
Lin, W. ; Department of Chemistry, City College and Graduate Center of the City University of New York, New York, New York 10031 ; Yang, B.X. ; Guo, S.P. ; Elmoumni, A.
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High-quality ZnSe1-xTex alloys spanning the entire compositional range have been grown by molecular-beam epitaxy. Good compositional control can be obtained by adjusting the beam equivalent pressure ratio of Se to Zn during growth. Double-crystal x-ray rocking curves with full widths at half maximum as narrow as 70 arcsec were obtained suggesting excellent crystalline quality. The p-type doping with nitrogen of ZnSe1-xTex alloys having Te contents from 0% to 100% has been systematically studied. The free hole concentration increases from 1017 to 1019 cm-3 as the Te content increases from 12% to 40%. The N-doped ZnSeTe lattice matched to InP has a free hole concentration of 2×1019 cm-3. This highly doped material was used as the p-type ohmic contact layer in light-emitting diodes made from ZnCdMgSe/ZnCdSe quantum-well structures grown on InP substrates that emit in the red, green and blue regions. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:75 ,  Issue: 17 )