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Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0–0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si

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4 Author(s)
Lin, C.H. ; Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 ; Lee, S.W. ; Chen, Haydn ; Wu, T.B.

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Highly (100) textured Pb(ScTa)1-xTixO3 (x=0–0.3) thin films were grown on LaNiO3/Pt/Ti electrode-coated Si substrate using metal-organic chemical vapor deposition at 685 °C. Ti addition was introduced to modify the dielectric properties. Diffuse phase transition, typical of relaxor ferroelectrics was noticed. As Ti content increased from 0% to 30%, the phase transition temperature (Tmax) gradually shifted from -10 to 120 °C with the dielectric constant at Tmax increased from 1397 to 1992 (1 kHz). Loss tangent values are generally below 0.025. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:75 ,  Issue: 16 )