By Topic

Domain structure of magnetic layers deposited on patterned silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Landis, S. ; Laboratoire Nanostructures et Magnétisme, DRFMC/SP2M, CEA Grenoble, 17 Avenue des Martyrs, 38054 Grenoble Cédex 9, France ; Rodmacq, B. ; Dieny, B. ; Dalzotto, B.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Arrays of Si square dots down to 200 nm in size were patterned on silicon substrates, and thin films of different magnetic materials were sputter deposited on these patterned substrates. The magnetic film covers the top of the dots, the bottom of the grooves and to much less extent the sidewalls of the dots. Single domain magnetic dots were obtained for Co/NiO bilayers and Co/Pt multilayers, without significant direct coupling mediated by the magnetic deposit on the sidewalls of the dots. Our results indicate that, in these arrays, the magnetic pinning forces are stronger than the estimated value of the largest demagnetizing magnetostatic field on each individual dot. As a result, any magnetic configuration could in principle be stored in such arrays. This approach seems therefore very promising for the preparation of magnetic storage media with ultrahigh density. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 16 )