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Large-scale synthesis of single crystalline gallium nitride nanowires

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7 Author(s)
Cheng, G.S. ; Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People’s Republic of China ; Zhang, L.D. ; Zhu, Y. ; Fei, G.T.
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Large-scale synthesis of single crystalline GaN nanowires in anodic alumina membrane was achieved through a gas reaction of Ga2O vapor with a constant flowing ammonia atmosphere at 1273 K. X-ray diffraction, Raman backscattering spectroscopy, scanning electron microscopy, and transmission electron microscopy indicated that those GaN nanowires with hexagonal wurtzite structure were about 14 nm in diameter and up to several hundreds of micrometers in length. The growth mechanism of the single crystalline GaN nanowires is discussed. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 16 )

Date of Publication:

Oct 1999

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