Scheduled System Maintenance on December 17th, 2014:
IEEE Xplore will be upgraded between 2:00 and 5:00 PM EST (18:00 - 21:00) UTC. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Large-scale synthesis of single crystalline gallium nitride nanowires

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Cheng, G.S. ; Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People’s Republic of China ; Zhang, L.D. ; Zhu, Y. ; Fei, G.T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Large-scale synthesis of single crystalline GaN nanowires in anodic alumina membrane was achieved through a gas reaction of Ga2O vapor with a constant flowing ammonia atmosphere at 1273 K. X-ray diffraction, Raman backscattering spectroscopy, scanning electron microscopy, and transmission electron microscopy indicated that those GaN nanowires with hexagonal wurtzite structure were about 14 nm in diameter and up to several hundreds of micrometers in length. The growth mechanism of the single crystalline GaN nanowires is discussed. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 16 )