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Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching

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6 Author(s)
Chien, F.S.-S. ; Department of Physics, National Tsing-Hua University, Hsinchu 300, Taiwan, Republic of China ; Wu, C.-L. ; Chou, Y.-C. ; Chen, T.T.
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We have demonstrated that silicon nanostructures with high aspect ratios, having ∼400 nm structural height and ∼55 nm lateral dimension, may be fabricated by scanning probe lithography and aqueous KOH orientation-dependent etching on the H-passivated (110) Si wafer. The high spatial resolution of fabricated features is achieved by using the atomic force microscope based nano-oxidation process in ambient. Due to the large (110)/(111) anisotropic ratio of etch rate and the large Si/SiO2 etch selectivity at a relatively low etching temperature and an optimal KOH concentration, high-aspect-ratio gratings with (111)-oriented structural sidewalls as well as hexagonal etch pit structures determined by the terminal etch geometry can be obtained. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:75 ,  Issue: 16 )