Improved spectrometric performance of CdTe radiation detectors in a p-i-n design

CdTe radiation detectors were fabricated using a p-i-n design and a significant improvement in the spectral properties was obtained during room temperature operation. An iodine doped n-CdTe layer was grown on the Te faces of the (111) oriented high resistivity CdTe crystals at the low substrate temperature of 150 °C. An aluminum electrode was evaporated on the n-CdTe side for the n-type contact, while a gold electrode on the opposite side acted as the p-type contact. Very low leakage currents, typically 60 pA/mm², were attained at room temperature (25 °C) for an applied reverse bias of 250 V. Detectors exhibited excellent spectral responses with an energy resolution of 1.42, 1.7, and 4.2 keV FWHM at 59.5, 122, and 662 keV γ peaks, respectively. © 1999 American Institute of Physics.