By Topic

Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Behbehani, M.K. ; Department of Materials Science and Engineering, North Carolina State University, Box 7916, Raleigh, North Carolina 27695 ; Piner, E.L. ; Liu, S.X. ; El-Masry, N.A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have recently reported the occurrence of phase separation in InxGa1-xN samples with x≫0.25. Theoretical studies have suggested that InxGa1-xN can phase-separate asymmetrically into a low InN% phase and an ordered high InN% phase. In this letter, we report on the existence of simultaneous phase separation and ordering of InxGa1-xN samples with x≫0.25. In these samples, phase separation was detected by both transmission electron microscopy selected area diffraction (TEM-SAD) and x-ray diffraction. Ordering was detected by both imaging and TEM-SAD. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 15 )