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Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

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5 Author(s)
Behbehani, M.K. ; Department of Materials Science and Engineering, North Carolina State University, Box 7916, Raleigh, North Carolina 27695 ; Piner, E.L. ; Liu, S.X. ; El-Masry, N.A.
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We have recently reported the occurrence of phase separation in InxGa1-xN samples with x≫0.25. Theoretical studies have suggested that InxGa1-xN can phase-separate asymmetrically into a low InN% phase and an ordered high InN% phase. In this letter, we report on the existence of simultaneous phase separation and ordering of InxGa1-xN samples with x≫0.25. In these samples, phase separation was detected by both transmission electron microscopy selected area diffraction (TEM-SAD) and x-ray diffraction. Ordering was detected by both imaging and TEM-SAD. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:75 ,  Issue: 15 )