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Browse Journals & Magazines > Applied Physics Letters ...> Volume:75 Issue:11 Help

High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor

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5 Author(s)
Lin, Y.S. ; Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China ; Hsu, W.-C. ; Wu, C.H. ; Lin, W.
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A double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor has been successfully fabricated by metalorganic chemical-vapor deposition. Improved electron mobility as high as 5410 (19 200) cm2/V s at 300 (77) K along with turn-on voltage as high as 2.3 V and reverse gate-to-drain voltage up to 75 V are achieved. These characteristics are attributed to the use of the δ-doped, undoped InGaP Schottky layer, and undoped GaAs setback layer. Moreover, the parasitic parallel conduction can be eliminated. The activation energy is also deduced. © 1999 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:75 ,  Issue: 11 )

Date of Publication: Sep 1999

Page(s):
1616 - 1618
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.124772
Date of Current Version :
18 June 2009
Issue Date :
Sep 1999

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