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Self-aligned current confinement structure using AlAs/InP tunnel junction in GaInAsP/InP semiconductor lasers

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5 Author(s)
Sekiguchi, S. ; Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan, 226-8503 ; Miyamoto, T. ; Kimura, Tadayoshi ; Koyama, F.
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We propose a current confinement structure which can be self-formed by thermal annealing of a electrode metal with a self-aligning process. The migrated metal selectively destroys an AlAs/InP tunnel junction to form a high resistance isolation layer. The hole current can be injected through a preserved tunnel junction window. We confirmed its lateral confinement effect from the near-field pattern of fabricated GaInAsP/InP stripe lasers. The proposed current confinement structure is very simple and useful for the lateral injection in semiconductor optical devices including long-wavelength vertical-cavity surface-emitting lasers. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 11 )