We have fabricated 15.4% and 12.4% efficient thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to CuIn1-xGaxSe2. The ED and EL device parameters are compared with those of a 17.7% PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics. © 1999 American Institute of Physics.