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Thin-film CuIn1-xGaxSe2 photovoltaic cells from solution-based precursor layers

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4 Author(s)
Bhattacharya, R.N. ; National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 ; Batchelor, W. ; Hiltner, J.F. ; Sites, J.R.

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We have fabricated 15.4% and 12.4% efficient thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to CuIn1-xGaxSe2. The ED and EL device parameters are compared with those of a 17.7% PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 10 )

Date of Publication:

Sep 1999

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