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Silicon-based single-electron memory using a multiple-tunnel junction fabricated by electron-beam direct writing

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4 Author(s)
Dutta, A. ; Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan ; Lee, S.P. ; Hatatani, S. ; Oda, S.

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Multiple-tunnel-junction-based nonvolatile single-electron-memory devices are promising for fast write/erase operation and long retention time. Fabrication of multiple-tunnel junctions with a predetermined number of barriers and islands is a major problem in realizing such devices. We have fabricated multiple-tunnel-junction-based single-electron devices by an electron-beam direct writing technique in a silicon-on-insulator layer. Using this technique, it is possible to fabricate multiple ultrasmall islands and tunnel barriers at a predetermined position, which is very important for reproducible device characteristics. Single-electron-memory devices based on multiple-tunnel junctions are fabricated. In these devices, a multiple-tunnel junction connects the gate electrode and a storage island. The Coulomb blockade across the multiple-tunnel junction acts as an energy barrier. Single-electron-memory operation is observed at 20 K. Retention time of at least 4 h has been observed. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 10 )