By Topic

Low-resistance ohmic contacts to p-type GaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Ho, Jin-Kuo ; Opto-Electronics and Systems Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China ; Jong, Charng-Shyang ; Chiu, Chien C. ; Huang, Chao-Nien
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.123546 

Low-resistance ohmic contacts with high transparency to p-type GaN have been developed by oxidizing Ni/Au thin films. Compared to the metallic Ni/Au contacts, the oxidized Ni/Au contacts exhibited lower specific contact resistance and much improved transparency. The transparency was from 65% to 80% in the wavelength of 450–550 nm. A specific contact resistance below 1.0×10-4 Ω cm2 was obtained by oxidizing Ni(10 nm)/Au(5 nm) on p-type GaN. The mechanism of low-resistance ohmic contact could be related to the formation of NiO. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 9 )