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Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method

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6 Author(s)
Hu, G.D. ; Department of Electronic Engineering and Material Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong ; Wilson, I.H. ; Xu, J.B. ; Cheung, W.Y.
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SrBi2Ta2O9 (SBT) ferroelectric thin films were prepared by metalorganic decomposition on Pt/Ti/SiO2/Si substrates at annealing temperatures ranging from 600 to 750 °C. The SBT thin films were annealed layer by layer during the spin-coating process using a rapid thermal annealing (RTA) furnace. The relative intensity of (200) peak in x-ray diffraction increased with the increase of the annealing temperature. A (200)-predominant film can be formed at 700 and 750 °C. For the film annealed by RTA furnace at 650 °C, the remanent polarization (2Pr) and coercive field (2Ec) were 19.8 μC/cm2 and 116 kV/cm, respectively. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:74 ,  Issue: 9 )