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Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering

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4 Author(s)
Dogheche, E. ; Laboratoire des Matériaux Avancés Céramiques, Université de Valenciennes et du Hainaut, Cambrésis Le Mont-Houy BP311, Valenciennes F-59304, France ; Remiens, D. ; Boudrioua, A. ; Loulergue, J.C.

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Highly textured hexagonal aluminum nitride (AlN) thin films were deposited on silicon substrates by radio-frequency magnetron sputtering at a substrate temperature below 400 °C and annealed in the temperature range of 400–450 °C by rapid thermal annealing. The optical and the electro-optical properties have been investigated using the prism-coupling technique. Both ordinary and extraordinary refractive indices (n0=2.0058 and ne=2.0374 at 632.8 nm) were respectively determined from the transverse electric and the transverse magnetic mode excitations. Furthermore, refractive index profiles analysis by using an improved inverse Wentzel–Kramer–Brillouin method reveals a step-like behavior of AlN thin films. The optical losses have been evaluated to be around 7 dB cm-1. The electro-optic coefficient r13 of 0.98 pm/V has been measured from the variation of the shift of guided-modes spectrum as a function of the applied electric field in the experiment. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 9 )

Date of Publication:

Mar 1999

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