By Topic

Valence-band structure of wurtzite GaN including the spin-orbit interaction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ren, G.B. ; Department of Physics and Astronomy, Cardiff University, Cardiff CF2 3YB, United Kingdom ; Liu, Y.M. ; Blood, P.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have investigated the effects of the spin-orbit interaction on the valence-band structure of wurtzite GaN in the k∙p theory. The spin-orbit interaction is usually neglected in nitrides, which leads to three doubly degenerate bands: the heavy-hole, light-hole, and crystal-field split-off bands. Including the spin-orbit interaction, this degeneracy is removed to give six single bands. We obtained the Luttinger-like parameters in bulk wurtzite GaN by fitting data obtained from an empirical pseudopotential calculation obtaining a value for the parameter A7 of 93.7 meV/Å. We also used these results to calculate the valence-band structures of a GaN/AlGaN quantum well. Our result shows the spin-orbit interaction is important in GaN and associated quantum well structures. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 8 )