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Vacancy defects in solid-phase epitaxial grown layers of self-implanted Si

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5 Author(s)
Xu, Jun ; Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831 ; Roth, E.G. ; Holland, O.W. ; Mills, A.P.
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A method for preparing shallow dopant distributions via solid-phase epitaxial growth (SPEG) following amorphization by low-energy Si self-ion implantation leaves defects that can lead to unwanted dopant impurity diffusion. The double implant method for SPEG [O. W. Holland etal, J. Electron. Mater. 25, 99 (1996)] uses both low- and high-energy Si self-ion implantation to remove most of the interstitials. Nevertheless, we find that measurable crystalline imperfections remain following the SPEG annealing step. Measurements of defect profiles using variable-energy positron spectroscopy show that there are divacancy-impurity complexes in the SPEG layer and V6 and larger vacancy clusters near the SPEG-crystalline interface. These measurements should be useful for modeling the diffusion of dopant atoms and for fine tuning the double implant parameters. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 7 )