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Morphological control and structural characteristics of crystalline Ge–C systems: Carbide nanorods, quantum dots, and epitaxial heterostructures

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3 Author(s)
Nesting, David C. ; Department of Chemistry, Arizona State University, Tempe, Arizona 85287-1604 ; Kouvetakis, J. ; Smith, David.J.

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Chemical precursors are used to grow crystalline Ge–C materials with unusual morphologies that depend on the molecular design of the precursor and the C concentration. Ge–C nanorods with overall C content of about 13–15 at. % and lattice constants close to that of pure Si grew very rapidly from the surface of a 40 nm Ge–C epitaxial film. Coherent carbide islands are formed after epitaxial growth of 20 nm Ge1-xCx (x=9 at. %) on (100)Si. Lower reaction temperatures resulted in extremely low growth rate of epitaxial Ge1-xCx (x=3–5 at. %) heterostructures with very flat surfaces implying two-dimensional layer-by-layer growth. The use of precursor chemistry as reported here to control morphology and composition in the Ge–C system may provide a simple and reliable synthetic route to a new family of Si-based heterostructures. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:74 ,  Issue: 7 )