IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:74 Issue:6 Help

Two-band tunneling currents in metal-oxide-semiconductor capacitors at the transition from direct to Fowler–Nordheim tunneling regime

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Okhonin, S. ; Institute for Micro- and Optoelectronics and Electronics Laboratory LEG, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland ; Fazan, P. ; Guegan, G. ; Deleonibus, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.123385 

The conduction and valence band tunneling currents in ultrathin SiO2 films are studied. The slopes of the current–voltage characteristic agree well with the simulations performed. Conduction band current oscillations due to interference of the electrons from the inversion channel at the oxide/gate interface are observed. The shape of the slope of the valence band current in Fowler–Nordheim regime can be explained by the interference of the valence band electron wave at the oxide/gate interface. © 1999 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:74 ,  Issue: 6 )

Date of Publication: Feb 1999

Page(s):
842 - 843
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.123385
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Feb 1999

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.