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Steady-state thermal conductivity measurements of AlN and SiC substrate materials

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5 Author(s)
Dettmer, E.S. ; Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA ; Romenesko, B.M. ; Charles, H.K., Jr. ; Carkhuff, B.G.
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Measurements of thermal conductivity on conventional and newly developed electronic ceramics are presented as part of an effort to incorporate the new high-thermal-conductivity ceramics into microcircuit manufacturing. Motivated by large variations in values claimed by different vendors for ostensibly similar materials, a longitudinal bar apparatus was built to measure thermal conductivities of actual substrate materials on both an individual and a lot sampling basis. The values measured in this work are in general agreement with the manufactures' quoted values, with a few marked differences for certain AlN samples. The values measured using the longitudinal bar apparatus from room temperature to 80°C on the different materials agree with both previously published data on similar materials and current measurements by other researchers. The longitudinal bar data for high-thermal-conductivity samples are completely consistent with the flash diffusivity results. Data on the AlN samples subjected to thick-film firing show no measurable change in thermal conductivity, indicating that the material is stable after repeated firings in 850°C oxidizing atmospheres. The longitudinal bar apparatus appears to be operating as designed; measurements indicate that thermal resistances at the base and heater mounts are low enough not to affect the thermal conductivity measurements

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:12 ,  Issue: 4 )

Date of Publication:

Dec 1989

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