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Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering

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8 Author(s)
Kuball, M. ; H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom ; Demangeot, F. ; Frandon, J. ; Renucci, M.A.
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We have illustrated the use of ultraviolet (UV) Raman scattering to investigate the thermal stability of AlGaN layers with high-aluminum content. The degradation pathway of Al0.72Ga0.28N was monitored for high-temperature treatments up to 1200 °C. For annealing temperatures higher than 1150 °C, the Al0.72Ga0.28N film decomposes: a low- and a high-aluminum composition AlxGa1-xN phase emerge. At 1100 °C, prior to the Al0.72Ga0.28N decomposition, UV Raman scattering detects the buildup of a large strain in the Al0.72Ga0.28N film. The crystalline quality of Al0.72Ga0.28N is unaffected up to 1000 °C. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:74 ,  Issue: 4 )