By Topic

Optical characterization of the “E2” deep level in GaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Hacke, P. ; Semiconductor Laboratory, The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama-ken 351-0198, Japan ; Ramvall, P. ; Tanaka, S. ; Aoyagi, Y.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.123180 

The correspondence between the E2 level (∼Ec-0.55 eV) in n-type GaN undergoing thermoionization and photoionization was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck–Condon parameter, dFC=0.30 eV at 90 K. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 4 )