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Optical characterization of the “E2” deep level in GaN

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7 Author(s)
Hacke, P. ; Semiconductor Laboratory, The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama-ken 351-0198, Japan ; Ramvall, P. ; Tanaka, S. ; Aoyagi, Y.
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The correspondence between the E2 level (∼Ec-0.55 eV) in n-type GaN undergoing thermoionization and photoionization was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck–Condon parameter, dFC=0.30 eV at 90 K. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:74 ,  Issue: 4 )