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Metastable surface ordering in strain relaxed Si0.5Ge0.5 epitaxial layers grown at high temperature

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4 Author(s)
Reichert, H. ; Physics Department, University of Houston, Houston, Texas 77204-5506 ; Moss, S.C. ; Imperatori, P. ; Evans-Lutterodt, K.

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We have studied compositional ordering in the near surface region of 3500 Å thick unstrained Si0.5Ge0.5(001) samples grown by chemical vapor deposition. Measuring asymptotic Bragg scattering along integer and half-integer truncation rods, we found a type of metastable ordering at this surface which is characterized by integer/half-integer reflections along the integer order truncation rods. We show unambiguously that those scattering features originate from a thin layer at the surface. Annealing at 750 °C extinguished these reflections irreversibly, while the reflections of the RS3 bulk structure were not affected. Anomalous scattering at the Ge K edge also confirmed the existence of a new structure in the near surface region. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 4 )

Date of Publication:

Jan 1999

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