By Topic

High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R-plane sapphire

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Wraback, M. ; U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, Adelphi, Maryland 20783 ; Shen, H. ; Liang, S. ; Gorla, C.R.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.124223 

An optically addressed ultraviolet light modulator has been demonstrated which exploits the optical anisotropy in a ZnO film epitaxially grown on (011¯2) sapphire. This device achieves both high contrast and high speed by exploiting the anisotropic bleaching of the anisotropic absorption and concomitant ultrafast polarization rotation near the lowest exciton resonances produced by femtosecond ultraviolet pulses. The resultant modulation is characterized by a contrast ratio of 70:1, corresponding to a dynamic polarization rotation of 12°, and it decays to a quasiequilibrium value within 100 ps. © 1999 American Institute of Physics.  

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 4 )