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CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers

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14 Author(s)
Ivanov, S.V. ; Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia ; Toropov, A.A. ; Sorokin, S.V. ; Shubina, T.V.
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This letter reports on the self-organized growth of nanoscale dot-like CdSe-based islands during molecular beam epitaxy of CdSe/ZnSe nanostructures with a CdSe thickness between 0.75 and 3.0 monolayers. An increase in the nominal CdSe thickness results in a higher density of islands (up to 2×1010cm-2) and is accompanied by dramatic enhancement of the photoluminescence efficiency. The density of large relaxed islands appears to saturate at a value of (3–4)×109cm-2. Room temperature (Zn, Mg)(S, Se)-based optically pumped lasers with an extremely low threshold (less than 4 kW/cm2), as well as (Be, Mg, Zn)Se-based injection laser diodes using a single (2.5–2.8) monolayer thick CdSe active region, both demonstrating significantly enhanced degradation stability, have been fabricated and studied. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 4 )

Date of Publication:

Jan 1999

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