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Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n+-type doped GaAs

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5 Author(s)
Wang, D.P. ; Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China ; Wang, K.R. ; Huang, K.F. ; Huang, T.C.
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Photoreflectance spectroscopy of surface-intrinsic n+-doped (s-i-n+) GaAs has been measured at various power densities (Ppu) of a pump beam. Many Franz–Keldysh oscillations (FKOs) were observed above the band-gap energy, which will enable the electric-field strength (F) to be determined from the periods of the FKOs. Field F thus obtained is subject to photovoltaic effects. In order to reduce the photovoltaic effects from the pump beam, Ppu was kept below 10 μW/cm2 in the previous experiments. Here, we demonstrate that the built-in field can be determined at a larger Ppu by using fast Fourier transform techniques. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 3 )

Date of Publication:

Jan 1999

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