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Charge storage in Co nanoclusters embedded in SiO2 by scanning force microscopy

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4 Author(s)
Schaadt, D.M. ; Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093 ; Yu, E.T. ; Sankar, S. ; Berkowitz, A.E.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.123039 

Scanning force microscopy was used to study localized charge deposition and subsequent transport in Co nanoclusters embedded in SiO2 deposited on an n-type Si substrate. Co nanoclusters were charged by applying a bias voltage pulse between tip and sample, and electrostatic force microscopy was used to image charged areas, to determine quantitatively the amount of stored charge, and to characterize the discharging process. Charge was deposited controllably and reproducibly within areas ∼20–50 nm in radius, and an exponential decay in the peak charge density was observed. Longer decay times were measured for positive than for negative charge; this is interpreted as a consequence of the Coulomb-blockade energy associated with single-electron charging of the Co nanoclusters. © 1999 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:74 ,  Issue: 3 )

Date of Publication: Jan 1999

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