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Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

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7 Author(s)
Wu, M.F. ; Department of Technical Physics, Peking University, Beijing, 100871People’s Republic of China and Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium ; Vantomme, A. ; Hogg, S.M. ; Langouche, G.
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An InGaN layer was grown by metalorganic chemical vapor deposition on a sapphire (0001) substrate using a thick (≫2.2 μm) GaN intermediate layer. The In composition, which cannot be unambiguously determined by x-ray diffraction (XRD) or by photoluminescence, was determined by Rutherford backscattering (RBS). The perpendicular and parallel elastic strain of the In0.18Ga0.82N layer, e=+0.21% and e||=-0.53%, respectively, were derived using a combination of XRD and RBS/channeling. The small ratio |e/e|||=0.40 indicates that the In0.18Ga0.82N layer is much stiffer in the c-axis direction than in the a-axis direction. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:74 ,  Issue: 3 )