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Lateral-junction vertical-cavity surface-emitting laser grown by molecular-beam epitaxy on a GaAs (311) A-oriented substrate

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3 Author(s)
Vaccaro, Pablo O. ; ATR Adaptive Communications Research Laboratories, 2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0288, Japan ; Ohnishi, Hajime ; Fujita, Kazuhisa

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.124202 

A vertical-cavity surface-emitting laser was fabricated using a lateral p-n junction to inject carriers in the InGaAs active layer. The lateral p-n junction is formed in GaAs epilayers doped only with silicon and grown by molecular-beam epitaxy on a patterned GaAs (311) A-oriented substrate. This design allows the use of electrically insulating distributed Bragg reflectors and coplanar contacts while simplifying device process. Pulsed-mode operation at room temperature was obtained with a threshold current of 2.3 mA. Light emission spectrum has a single peak at 942 nm with a full width at half maximum of 0.15 nm. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 25 )

Date of Publication:

Jun 1999

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