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Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers

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6 Author(s)
Ono, Toshiaki ; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916 ; Rozgonyi, George A. ; Asayama, Eiichi ; Horie, H.
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The effect of dopant-type, antimony (Sb), arsenic (As), and boron (B), on the outdiffusion of oxygen in heavily doped Czochralski (Cz) silicon wafers has been investigated using secondary ion mass spectroscopy. The results indicate that, although oxygen diffusion in Cz silicon is retarded in heavily B- and As-doped wafers during low temperature annealing (800 °C), it is not influenced by heavy Sb doping. This indicates that charge effects and atom size effects have negligible influence on the diffusion of oxygen. The B and As diffusion retardation effect is attributed to the existence of dopant-oxygen complexes. The oxygen solubility was largest in the most heavily B-doped samples annealed at low temperature. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 24 )

Date of Publication:

Jun 1999

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