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Relaxation of the Si lattice strain in the Si(001)–SiO2 interface by annealing in N2O

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7 Author(s)
Ha, Yong Ho ; Department of Chemistry, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea ; Kim, Sehun ; Lee, Sun Young ; Jin Ho Kim
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It was clearly observed with medium energy ion scattering spectroscopy that the strain in the Si(001)–SiO2 interface of thermal oxides is relaxed by annealing in N2O. The strain relaxation could be correlated with the improved hot-electron hardness of the nitrided oxides compared with the thermal oxides. Based on the direct observation of the strain relaxation, it is suggested that the incorporated N atoms at the interface release the strain and increase the immunity of trap generation under the current stress. © 1999 American Institute of Physics.  

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 23 )

Date of Publication:

Jun 1999

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