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Anisotropic exchange for NiFe films grown on epitaxial NiO

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4 Author(s)
Lai, Chih-Huang ; Stanford Center for Res. on Inf. Storage Mater., Stanford Univ., CA, USA ; Matsuyama, H. ; White, Robert L. ; Anthony, Thomas C.

We have investigated the anisotropic exchange field He and the coercive field Hc for NiFe films deposited on epitaxial NiO {111} and {100} films grown by an MOCVD technique and for NiFe films deposited on polycrystalline NiO grown by both MOCVD and DC magnetron sputtering techniques. He and Hc were determined from MOKE hysteresis loops taken from room temperature to 300°C. For NiFe deposited on epitaxial NiO {111} Hc≈500-550 Oe and is isotropic; He≈80-100 Oe, for NiFe deposited on epitaxial Ni {100} He and Hc are about half these values. For NiFe deposited on MOCVD polycrystalline films He was similar but Hc smaller and anisotropic. For NiFe deposited on the sputtered polycrystalline films He was larger, 150 Oe, and Hc still smaller, 125 Oe, and anisotropic

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Magnetics, IEEE Transactions on  (Volume:31 ,  Issue: 6 )