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Bonding modifications in carbon nitride films induced by thermal annealing: An x-ray absorption near edge study

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8 Author(s)
Jimenez, I. ; Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Madrid, Spain ; Tong, W.M. ; Shuh, D.K. ; Holloway, B.C.
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The thermal stability of nonstoichiometric carbon nitride films has been studied by x-ray absorption near edge spectroscopy. Amorphous carbon nitride thin films were annealed in vacuum up to 1150 °C revealing the presence of nitrogen in different bonding configurations. Annealing to 450 °C results in the loss of ∼50% of the nitrogen. The remaining nitrogen is bonded to carbon within a graphitic framework and it evolves into a more stable configuration with increasing temperature without significant N loss up to 820 °C. Beyond this temperature, nitrogen loss occurs without important structural changes. © 1999 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:74 ,  Issue: 18 )

Date of Publication: May 1999

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