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Simulation and characterization of the selective area growth process

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13 Author(s)
Alam, M.A. ; Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 ; People, R. ; Isaacs, E. ; Kim, C.Y.
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A simple three-dimensional vapor phase model is used to interpret and clarify the selective area growth process. The model predicts both normal and anomalous profiles of thickness and composition, including long range effects. These are verified by an extensive set of experiments. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:74 ,  Issue: 18 )