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Suppression of boron penetration by polycrystalline Si1-x-yGexCy in metal–oxide–semiconductor structures

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2 Author(s)
Chang, C.L. ; Department of Electrical Engineering, Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, New Jersey 08544 ; Sturm, J.C.

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A polycrystalline Si1-x-yGexCy layer grown by rapid thermal chemical vapor deposition has been used as a thin intermediate layer on top of the thin gate oxide in a metal–oxide–semiconductor structure with boron-doped polycrystalline silicon as the gate electrode. Although boron readily penetrated through the Si1-x-yGexCy and accumulated in it, boron penetration across the gate oxide into the substrate was greatly suppressed compared to that in structures without Si1-x-yGexCy layer. Our work suggests that the addition of carbon reduced the chemical potential of boron in polycrystalline Si1-x-yGexCy, compared to that in polycrystalline silicon or polycrystalline Si1-xGex. We have also observed no gate depletion effects with the use of poly-Si1-x-yGexCy layers in both p+ and n+ gate doping. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 17 )

Date of Publication:

Apr 1999

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