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Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

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4 Author(s)
Skromme, B.J. ; Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706 ; Jayapalan, J. ; Vaudo, R.P. ; Phanse, V.M.

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Low-temperature (1.7–20 K) photoluminescence and reflectance are used to investigate the free and bound exciton and shallow impurity states in GaN. A 300-μm-thick GaN layer grown by hydride vapor phase epitaxy on sapphire(0001), with an exceptionally low dislocation density (3×106cm-2) is used to obtain very high quality spectra. Both free and bound n=2 excitons are identified, leading to a confirmation of the A free exciton binding energy as about 26.4 meV, independent of strain. Principal neutral donor-bound exciton (D0,X) peaks involving two to three different donors are resolved, as are two-electron satellites involving up to five different residual donors with binding energies ranging from 22 to 34.5 meV. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 16 )