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Characterization of carrier-trapping phenomena in ultrathin chemical oxides using x-ray photoelectron spectroscopy time-dependent measurements

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7 Author(s)
Hagimoto, Y. ; Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan ; Fujita, T. ; Ono, K. ; Fujioka, H.
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We report a technique to characterize carrier-trapping phenomena in SiO2 by measuring the Si 2p core-level energy of Si substrates covered with thin SiO2 layers as a function of x-ray irradiation time. It is found that the Si 2p peak energy, which corresponds to the band bending at the SiO2/Si interface, changes as the x-ray irradiation time increases. We attribute this to carrier-trapping phenomena in SiO2. By using this technique, it is found that the carrier-trapping phenomena differ remarkably among several chemical oxides. We also discuss the atomic structure of the traps that cause the trapping phenomena. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 14 )

Date of Publication:

Apr 1999

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