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Light-emitting diodes and laser diodes based on a Ga1-xInxAs/GaAs1-ySby type II superlattice on InP substrate

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7 Author(s)
Peter, M. ; Fraunhofer-Institut für Angewandte Festköperphysik, Tullastrasse 72, D-79108 Freiburg, Germany ; Kiefer, R. ; Fuchs, F. ; Herres, N.
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We report on the fabrication and characterization of light-emitting diodes (LEDs) and laser diodes with a staggered type II Ga1-xInxAs/GaAs1-ySby superlattice (SL) as the active region. SLs were grown strain compensated on the InP substrate using metalorganic chemical vapor deposition. The LEDs show room-temperature electroluminescence up to 2.14 μm, the index-guided diode lasers displayed cw laser emission at 1.71 μm up to 300 K. The spontaneous emission spectrum was found to show a significant blueshift with increasing injection current density, resulting in shorter laser emission wavelengths for the diode laser than for the LED. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 14 )