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Epitaxial growth of magnetoresistive (00h), (0hh), and (hhh) La2/3Sr1/3MnO3 thin films on (001)Si substrates

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7 Author(s)
Fontcuberta, J. ; Institut de Ciència de Materials de Barcelona—CSIC, Bellaterra 08193, Catalunya, Spain ; Bibes, M. ; Martinez, B. ; Trtik, V.
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We show that suitable choice of the buffer heterostructure allows us to obtain epitaxial (00h), (0hh), and (hhh) La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. The magnetotransport properties are investigated. Irrespective of the film texture, it is found that the easy-magnetization direction lies within the film plane. The low-field magnetoresistance is mainly controlled by the in-plane misorientation of crystallites while differences associated with the distinct microstructure of the interfaces appear to have only a second-order effect. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 12 )

Date of Publication:

Mar 1999

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