We show that suitable choice of the buffer heterostructure allows us to obtain epitaxial (00h), (0hh), and (hhh) La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. The magnetotransport properties are investigated. Irrespective of the film texture, it is found that the easy-magnetization direction lies within the film plane. The low-field magnetoresistance is mainly controlled by the in-plane misorientation of crystallites while differences associated with the distinct microstructure of the interfaces appear to have only a second-order effect. © 1999 American Institute of Physics.