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High-efficiency diode lasers at high output power

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5 Author(s)
Wang, Jun ; Semiconductor Laser International Corporation, 15 Link Drive, Binghamton, New York 13904 ; Smith, Barry ; Xie, Xiaomin ; Wang, Xinqiao
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808 nm lasers grown by molecular beam epitaxy show extremely high internal quantum efficiency and low internal loss, which results in very high slope efficiency at a long cavity length, and consequently, extremely high total power conversion efficiency at high continuous-wave power output. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:74 ,  Issue: 11 )