By Topic

High-efficiency diode lasers at high output power

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Wang, Jun ; Semiconductor Laser International Corporation, 15 Link Drive, Binghamton, New York 13904 ; Smith, Barry ; Xie, Xiaomin ; Wang, Xinqiao
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

808 nm lasers grown by molecular beam epitaxy show extremely high internal quantum efficiency and low internal loss, which results in very high slope efficiency at a long cavity length, and consequently, extremely high total power conversion efficiency at high continuous-wave power output. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 11 )