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Ge-related faceting and segregation during the growth of metastable (GaAs)1-x(Ge2)x alloy layers by metal–organic vapor-phase epitaxy

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7 Author(s)
Norman, A.G. ; National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 ; Olson, J.M. ; Geisz, J.F. ; Moutinho, H.R.
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(GaAs)1-x(Ge2)x alloy layers, 0≪x≪0.22, have been grown by metal–organic vapor-phase epitaxy on vicinal (001) GaAs substrates. Transmission electron microscopy revealed pronounced phase separation in these layers, resulting in regions of GaAs-rich zinc-blende and Ge-rich diamond cubic material that appears to lead to substantial band-gap narrowing. For x=0.1 layers, the phase-separated microstructure consisted of intersecting sheets of Ge-rich material on {115}B planes surrounding cells of GaAs-rich material, with little evidence of antiphase boundaries. Atomic force microscopy revealed {115}B surface faceting associated with the phase separation. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:74 ,  Issue: 10 )