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Browse Journals & Magazines > Applied Physics Letters ...> Volume:73 Issue:9 Help

Bond-length strain in buried Ga1-xInxAs thin-alloy films grown coherently on InP(001)

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4 Author(s)
Woicik, J.C. ; National Institute of Standards and Technology, Gaithersburg, Maryland 20899 ; Gupta, J.A. ; Watkins, S.P. ; Crozier, E.D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.122371 

The bond lengths in a series of strained, buried Ga1-xInxAs thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.© 1998 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:73 ,  Issue: 9 )

Date of Publication: Aug 1998

Page(s):
1269 - 1271
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.122371
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Aug 1998

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