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Chemical vapor deposition of diamond growth using a chemical precursor

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5 Author(s)
Leroy, Eric ; University of Fribourg, Institute of Physics, Chemin du Musée, 3, Pérolles, CH-1700 Fribourg, Switzerland ; Kuttel, Olivier M. ; Schlapbach, Louis ; Giraud, Luc
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.122081 

A nucleation method to form diamond on chemically pretreated silicon (111) surfaces is reported. The nucleation consisted of binding covalently 2,2-divinyladamantane molecules on the silicon substrate. Subsequently, low pressure diamond growth was performed via microwave plasma chemical vapor deposition in a tubular deposition system. The resulting diamond layers presented a good crystallinity and the Raman spectra showed a very sharp peak at 1331 cm-1. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 8 )

Date of Publication:

Aug 1998

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