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Effect of crystallinity on the magnetoresistive properties of La0.8MnO3-δ thin films grown by chemical vapor deposition

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5 Author(s)
Pignard, S. ; Laboratoire des Matériaux et du Génie Physique (UMR 5628 CNRS), Ecole Nationale Supérieure de Physique de Grenoble, BP 46, 38 402 Saint-Martin d’Hères Cedex, France ; Vincent, H. ; Senateur, J.P. ; Frohlich, K.
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We report here a study on the role of crystallinity on the magnetoresistive properties of self-doped La0.8MnO3-δ thin films. Films have been grown by a liquid-source metalorganic chemical vapor deposition technique on two different single crystals: SrTiO3 (001) and Al2O3 (012). Epitaxial films are obtained on strontium titanate and show a high magnetoresistance peak at low fields: maximum magnetoresistive effect in the vicinity of the magnetic transition temperature, and negligible 50 K below. Polycrystalline films are observed on sapphire; they exhibit a lower magnetoresistance of several percent which remains nearly constant over a wide temperature range. Two magnetoresistive regimes can be distinguished in these films: in low fields (up to 5 mT), a strong magnetoresistance is obtained with a sensitivity of 0.28%/mT at 78 K; in higher fields, the magnetoresistance is linear and lower than this obtained in epitaxial films. The role of grain boundaries on the magnetoresistive effect is discussed. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 7 )

Date of Publication:

Aug 1998

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