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Hydrogen passivation of silicon carbide by low-energy ion implantation

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6 Author(s)
Achtziger, N. ; Institut für Festkörperphysik, Universität Jena, D-07743 Jena, Germany ; Grillenberger, J. ; Witthuhn, W. ; Linnarsson, M.K.
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Ion implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in epitaxial α-SiC (polytypes 4H and 6H). To avoid excessive damage and the resulting trapping of hydrogen, the implantation is performed with low energy (600 eV 2H2+). The 2H depth profile is analyzed by secondary ion mass spectrometry. Electrical properties are measured by capacitance–voltage profiling and admittance spectroscopy. In p-type SiC, hydrogen diffuses on a μm scale even at room temperature and effectively passivates acceptors. In n-type SiC, the incorporation of H is suppressed and no passivation is detected. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 7 )

Date of Publication:

Aug 1998

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