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Ferroelectric characterization of highly (0001)-oriented YMnO3 thin films grown by chemical solution deposition

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5 Author(s)
Yi, Woo-Chul ; Department of Physics, Seoul National University, Seoul 151-742, Korea ; Choe, Joon-Seon ; Moon, Chang-Rok ; Kwun, Sook‐Il
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Highly (0001)-oriented thin films of YMnO3 were grown directly on Si substrates by chemical solution deposition. The crystallinity of the films was investigated by using x-ray diffraction: θ–2θ scan, rocking curve, and pole figure. Analysis of the x-ray photoelectron spectroscopy data and Rutherford backscattering spectroscopy spectrum showed that the films had a single phase of stoichiometric YMnO3. The ferroelectric properties of YMnO3 were investigated by measuring the temperature dependence of the capacitance–voltage characteristics in the metal/ferroelectric/semiconductor structure. Screening of the ferroelectricity of YMnO3 thin film at room temperature was discussed in conjunction with the charge effects. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:73 ,  Issue: 7 )