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Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

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5 Author(s)
Wang, Zhi Jie ; Institute of Materials Research and Engineering, National University of Singapore, 119260 Singapore ; Chua, Soo-Jin ; Zhou, Fan ; Wang, Wei
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.122899 

An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 μm. A characteristic temperature (T0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 26 )

Date of Publication:

Dec 1998

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