Cart (Loading....) | Create Account
Close category search window

Effect of hydrogenation on room-temperature 1.54 μm Er3+ photoluminescent properties of erbium-doped silicon-rich silicon oxide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Shin, Jung H. ; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusung-dong, Yusung-gu, Taejon, Korea ; Se-Young Seo ; Lee, Seok-Ju

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The effect of hydrogenation on the room-temperature 1.54 μm Er3+ photoluminescent properties of erbium-doped silicon-rich silicon oxide thin films is investigated. Two samples with 7 and 1 at. % excess silicon and 0.4 at. % erbium were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition of SiH4 and O2 with cosputtering of erbium and subsequent rapid thermal anneal at 900 °C. Hydrogenation by exposure to D plasma doubles the 1.54 μm Er3+ luminescence intensity from the high excess silicon content sample but halves that from the low excess silicon content sample. The lifetimes and excitation power dependence of Er+ luminescence show that hydrogenation primarily affects the active erbium fraction, increasing it in case of the high excess silicon sample but decreasing it in case of the low excess silicon content sample. With proper treatments, Er3+ luminescence lifetime of over 7 ms is obtained. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 25 )

Date of Publication:

Dec 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.