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Direct optical measurement of the valence band offset of p+Si1-x-yGexCy/p-Si(100) by heterojunction internal photoemission

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3 Author(s)
Chang, C.L. ; Department of Electrical Engineering, Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, New Jersey 08544 ; Rokhinson, L.P. ; Sturm, J.C.

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Optical absorption measurements have been performed to study the effect of substitutional carbon on the valence band offset of compressively strained p+Si1-x-yGexCy/(100) p-Si. The compressively strained p+Si1-x-yGexCy/(100) p-Si heterojunction internal photoemission structures were grown by rapid thermal chemical vapor deposition with substitutional carbon levels up to 2.5%. Carbon decreased the valence band offset by 26±1 meV/% substitutional carbon. Based on previous reports of the effect of carbon on the band gap of Si1-x-yGexCy, our work suggests that the effect of carbon incorporation on the band alignment of compressively strained Si1-x-yGexCy/Si is to reduce the valence band offset, with a negligible effect on the conduction band alignment. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 24 )