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Silica capping for Al0.3Ga0.7As/GaAs and In0.2Ga0.8As/GaAs quantum well intermixing

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7 Author(s)
Li, G. ; Institute of Materials Research and Engineering, 10 Kent Ridge Crescent, Singapore 119260, Singapore ; Chua, S.J. ; Xu, S.J. ; Wang, X.C.
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Spin-on silica capping has been demonstrated to be an effective dielectric encapsulant layer for quantum well (QW) intermixing at temperatures significantly lower than for conventionally deposited silica. A blueshift of up to 125 meV was observed in the photoluminescence (PL) peak energy of both GaAs and InGaAs QWs after annealing for less than 60 s at 850 °C, without noticeable degradation in the PL emission intensity. A threshold temperature was identified below which no significant QW disordering took place. The activation energy for Al diffusion in Al0.3Ga0.7As/GaAs QWs was about 2.55 eV. Broadly similar effects were seen for In0.2Ga0.8As/GaAs QWs but, in addition, strain effects appear to enhance disordering during the early stages of the anneal. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:73 ,  Issue: 23 )