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Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels

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4 Author(s)
Park, G. ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712-1084 ; Shchekin, O.B. ; Huffaker, D.L. ; Deppe, D.G.

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Data are presented on the lasing transitions from InGaAs/GaAs quantum dots that exhibit four well-resolved energy transitions, with the electronic state density of a two-dimensional harmonic oscillator. Lasing has been obtained on the second and third transitions, depending on the cavity (gain) length, with the longest lasing wavelength measured to be 1.19 μm. The temperature dependence of threshold is studied and regions of nearly temperature-independent threshold are found. Interesting aspects of the unique electronic state density for lasers are discussed. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 23 )